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| Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching IXGH 60N60B2 IXGT 60N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A < 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ 600 V TC = 25C Maximum Ratings 600 600 20 30 75 60 300 ICM = 150 500 -55 ... +150 150 -55 ... +150 300 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) C (TAB) G C E C = Collector, TAB = Collector W C C C C Features G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb.in. 6 4 g g Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3.0 TJ = 25C TJ = 150C 5.0 50 1 100 TJ = 25C 1.8 V A mA nA V VGE(th) ICES IGES VCE(sat) IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 50 A, VGE = 15 V Note 1. (c) 2003 IXYS All rights reserved DS99113(11/03) IXGH 60N60B2 IXGT 60N60B2 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 58 3900 290 100 170 25 57 Inductive load, TJ = 25C IC = 50 A, VGE = 15 V VCE = 400 V, RG = 3.3 Note 1 Inductive load, TJ = 125C IC = 50 A, VGE = 15 V VCE = 400 V, RG = 3.3 Note 1 28 30 160 270 100 170 1.0 28 36 0.6 310 240 2.8 0.15 S P TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = 50 A; VCE = 10 V, Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz pF pF pF nC nC nC ns ns ns ns ns ns mJ ns ns mJ 0.25 K/W K/W Dim. IC = 50 A, VGE = 15 V, VCE = 0.5 VCES e 2.5 mJ Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Notes: 1. Pulse test, t < 300s wide, duty cycle < 2%. Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 60N60B2 IXGT 60N60B2 Fig. 1. Output Characteristics @ 25 Deg. C 100 90 80 70 VGE = 15V 13V 11V 9V 350 300 250 7V VGE = 15V 13V 11V Fig. 2. Extended Output Characteristics @ 25 deg. C I C - Amperes 60 50 40 30 20 10 0 0.5 1 1.5 2 I C - Amperes 9V 200 150 100 50 5V 0 7V 5V 2.5 3 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 100 90 80 VGE = 15V 13V 11V 9V 1.3 1.4 0 1 2 3 V C E - Volts 4 5 6 7 8 Fig. 4. Dependence of V CE(sat) on Tem perature V GE = 15V I C = 100A I C - Amperes 70 60 50 40 30 20 10 0 0.5 1 1.5 2 7V V C E (sat)- Normalized 1.2 1.1 1.0 0.9 0.8 0.7 0.6 I C = 50A 5V I C = 25A 2.5 3 -50 -25 0 25 50 75 100 125 150 V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 3.7 3.4 3.1 TJ = 25C 250 200 300 TJ - Degrees Centigrade Fig. 6. Input Adm ittance VC E - Volts 2.8 2.5 2.2 1.9 I C - Amperes I C = 100A 50A 25A 150 100 TJ = 125C -40C TJ = 25C 50 1.6 1.3 5 6 7 8 9 10 11 12 13 14 15 16 17 0 4 5 6 7 8 9 10 V G E - Volts (c) 2003 IXYS All rights reserved V G E - Volts IXGH 60N60B2 IXGT 60N60B2 Fig. 7. Transconductance 100 90 80 TJ = -40C 25C 125C 10 9 8 TJ = 125C VGE = 15V VCE = 400V I C = 100A Fig. 8. De pendence of Turn-Off Energy on RG E off - milliJoules g f s - Siemens 70 60 50 40 30 20 10 0 0 7 6 5 4 3 2 1 I C = 50A I C = 25A 50 100 150 200 250 300 I C - Amperes Fig. 9. Depe nde nce of Turn-Off Ene rgy on Ic 7 6 R G = 3.3 VGE = 15V VCE = 400V 7 6 5 4 3 2 1 0 5 10 15 R G - Ohms 20 25 30 35 40 45 50 Fig. 10. Dependence of Turn-Off Energy on Tem perature R G = 3.3 VGE = 15V VCE = 400V I C = 100A E off - MilliJoules 4 3 2 1 0 20 30 TJ = 125C E off - milliJoules 5 I C = 50A TJ = 25C I C = 25A 0 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125 I C - Amperes Fig. 11. De pendence of Turn-Off Sw itching Tim e on RG td(off) tfi - - - - - TJ = 125C VGE = 15V VCE = 400V TJ - Degrees Centigrade Fig. 12. De pendence of Turn-Off Sw itching Tim e on Ic td(off) tfi - - - - - - 1200 1100 400 350 300 250 200 150 Switching Time - nanosecond 1000 900 800 700 600 500 400 300 200 0 Switching Time - nanosecond R G = 3.3 VGE = 15V VCE = 400V TJ = 125C I C = 25A I C = 50A I C = 100A TJ = 25C 100 50 5 10 15 R G - Ohms 20 25 30 35 40 45 50 20 30 40 50 60 70 80 90 100 I C - Amperes IXGH 60N60B2 IXGT 60N60B2 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature 350 15 Fig. 14. Gate Charge VCE = 300V I C = 50A I G = 10mA Switching Time - nanosecond 300 td(off) tfi - - - - - R G = 3.3 VGE = 15V VCE = 400V 250 I C = 25A 50A 100A 12 200 VG E - Volts I C = 100A 50A 25A 9 6 150 100 3 50 25 35 45 0 TJ - Degrees Centigrade 55 65 75 85 95 105 115 125 0 20 40 60 80 100 120 140 160 180 Q G - nanoCoulombs Fig. 15. Capacitance 10000 f = 1 MHz C ies 1000 C oes Capacitance - p F 100 C res 10 0 5 10 15 V C E - Volts 20 25 30 35 40 Fig. 16. Maxim um Transient Therm al Resistance 0.275 0.25 0.225 R (th) J C - (C/W) 0.2 0.175 0.15 0.125 0.1 0.075 0.05 1 10 Pulse Width - milliseconds 100 1000 (c) 2003 IXYS All rights reserved |
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